<dd id="cvago"></dd>

      

    1. <strong id="cvago"><form id="cvago"></form></strong>
      <th id="cvago"><progress id="cvago"></progress></th>
      

 



      

        
      

            

                

        
       

        
      

            

            
      
                CN
                EN
            
      
        
      



      









      
    
  
      
  


 





      
	Home
	
      
	About Us
	
      
	Newpros
    
      
	1200V 80 mΩ SIC MOSFET

      




      
	
      
	    1200V 80 mΩ SIC MOSFET
        Back
      
        PDF
          
      

      




      
   
      
   
      
       Introduction
       1. In recent years, the PV inverter market has entered a period of rapid development, and the demand for silicon carbide power devices has increased rapidly. When silicon carbide diode and MOSFET should be used in the BOOST circuit, the switching speed of the system can be improved, so as to optimize the energy consumption and volume of the whole system.
      
2. Silicon carbide MOSFET to match the PV industry customer needs, switching performance, pass-through capacity and product reliability can be standardized to the industry's best;
      
3. It is not only suitable for conventional switching applications, but also meets the high pressure and high speed switching applications with high control requirements. It adopts environment-friendly materials and conforms to RoHS standards.      
   
      
   
      
       Features
       1. High temperature resistance, operating temperature (175°C); Unipolar device, fast switching speed, low loss, suitable for high voltage, high frequency application conditions;
      
2. Using advanced thinning process, SIC MOSFET has excellent low impedance characteristics, reduce device energy loss;
      
3. Product packaging type: TO-247-3L, TO-247-4L and other packaging forms can be selected;
      
4. Passed the stringent reliability certification of the industry, including HTRB, HTGB test and HV-H3TRB test in large quantities.      
   
      

      






      
  SPECIFICATION  
  
      YJD212080NCFG1
      

      

      







      
  Related new products  
  
      

     
      1200V 40mΩ SiC MOSFET
      
     
      TOLL N100V MOSFETs for Industrial
      
     
      DFN1608 Package Small Signal Schottky Diode for Mobile Phone PCB
      
     
      High-side+Low-side PDFN5060 N30V Mosfet for PC Mainboard
      
     
      MMBZ Series ESD with Voltage Regulation Characteristics
      
     
      Small Signal Schottky and Switching Diode in DFN0603 Package
      
     
      New 100V 3.2mΩ SGT MOSFET for PD power supply
      
     
      Optimization Design of Rectifier Bridge —— New Package GBU-L
      
     
      IGBT Micro Trench Discrete for PV/Eenergy Storage/EV Charger Application
      
     
      N30V Trench MOSFET for PD VBUS
      
  
      

      













 


 










 











久久国产高潮流白浆免费观看久久,一本av中文字幕在线观看,一区 二区 三区精品 欧美,男女一级a 爱做视频
人妻被强的av系列
亚洲五月丁香中文字幕


      <dd id="cvago"></dd>
        

          

        1. <strong id="cvago"><form id="cvago"></form></strong>
          <th id="cvago"><progress id="cvago"></progress></th>